A semiconductor device can fail for various reasons. While some are manufacturing and packaging defects, the rest are due to prolonged use or usage under extreme conditions. Some mechanisms that lead to semiconductor defects include encapsulation failure, die-attach failure, wire-bond failure, bulk-silicon defects, oxide-layer faults, aluminum-metal faults (including electromigration, corrosion of aluminum, etc.), and thermal/electrical stress. These defects manifest as faults on chip-internal signals or registers, have the effect of inputs, outputs, or intermediate signals being always 0 or always 1, and do not switch as expected. If such faults occur in security-sensitive hardware modules, the security objectives of the hardware module may be compromised.
Scope | Impact | Likelihood |
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Availability Access Control | DoS: Instability |
While semiconductor-manufacturing companies implement several mechanisms to continuously improve the semiconductor manufacturing process to ensure reduction of defects, some defects can only be fixed after manufacturing. Post-manufacturing testing of silicon die is critical. Fault models such as stuck-at-0 or stuck-at-1 must be used to develop post-manufacturing test cases and achieve good coverage. Once the silicon packaging is done, extensive post-silicon testing must be performed to ensure that hardware logic implementing security functionalities is defect-free.
Operating the hardware outside device specification, such as at extremely high temperatures, voltage, etc., accelerates semiconductor degradation and results in defects. When these defects manifest as faults in security-critical, hardware modules, it results in compromise of security guarantees. Thus, operating the device within the specification is important.
CAPEC-ID | Attack Pattern Name |
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CAPEC-624 | Hardware Fault Injection The adversary uses disruptive signals or events, or alters the physical environment a device operates in, to cause faulty behavior in electronic devices. This can include electromagnetic pulses, laser pulses, clock glitches, ambient temperature extremes, and more. When performed in a controlled manner on devices performing cryptographic operations, this faulty behavior can be exploited to derive secret key information. |
CAPEC-625 | Mobile Device Fault Injection Fault injection attacks against mobile devices use disruptive signals or events (e.g. electromagnetic pulses, laser pulses, clock glitches, etc.) to cause faulty behavior. When performed in a controlled manner on devices performing cryptographic operations, this faulty behavior can be exploited to derive secret key information. Although this attack usually requires physical control of the mobile device, it is non-destructive, and the device can be used after the attack without any indication that secret keys were compromised. |
Name | Organization | Date | Date release | Version |
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Arun Kanuparthi, Hareesh Khattri, Parbati Kumar Manna, Narasimha Kumar V Mangipudi | Intel Corporation | 4.0 |
Name | Organization | Date | Comment |
---|---|---|---|
CWE Content Team | MITRE | updated Modes_of_Introduction, Related_Attack_Patterns | |
CWE Content Team | MITRE | updated Relationships | |
CWE Content Team | MITRE | updated Related_Attack_Patterns, Relationships | |
CWE Content Team | MITRE | updated Description, References, Relationships | |
CWE Content Team | MITRE | updated Mapping_Notes |